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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings (Ta=25C) TO-126ML * Maximum Temperatures Storage Temperature .............................................................................................. -50~+150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C).....................................................................................1.5 W Total Power Dissipation (Tc=25C) ......................................................................................10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage.......................................................................................-60 V BVCEO Collector to Emitter Voltage................................................................................... -50 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current.............................................................................................................. -3 A IC Collector Current (IC Peak)........................................................................................... -4.5 A Electrical Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VBE(sat) *hFE fT Min. -60 -50 -5 170 Typ. -0.3 15 Max. -1 -1 -1 -1 -1.5 400 Unit V V V uA uA uA V V MHz Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-50V VCE=-40V VEB=-4V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-500mA, VCE=-3V VCE=-5V, IC=-500mA, f=100MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% HSB857D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C o Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 2/4 Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=10IB 75 C o 25 C o Saturation Voltage (mV) hFE 100 100 75 C o hFE @ VCE=3V 125 C o 25 C o 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=10IB Capacitance & Reverse-Biased Voltage 1000 Saturation Voltage (mV) 75 C 1000 25 C o o Capacitance (pF) 100 Cob 125 C o 100 1 10 100 1000 10000 10 1 10 100 Collector Current-IC (mA) Reverse Biased Voltage (V) Safe Operating Area 10 PT=1ms PD - Ta 1.6 1.4 PD(W) , Power Dissipation Collector Current-IC (A) 1.2 1 0.8 0.6 0.4 0.2 1 PT=100ms PT=1s 0.1 1 10 100 1000 0 0 50 100 o 150 200 Forward Voltage-VCE (V) Ambient Temperature-Ta ( C ) HSB857D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 3/4 PD - Tc 12 10 PD(W), Power Dissipation 8 6 4 2 0 0 50 100 o 150 200 Ambient Temperature-Tc ( C) HSB857D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking: Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 4/4 A H SB B D E F 3 2 I G 1 J M L K O H Date Code 857D Control Code Ink Marking C Style: Pin 1.Emitter 2.Collector 3.Base N 3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1. Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2. Controlling dimension: millimeters. 3. Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4. If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F., No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB857D HSMC Product Specification |
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